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MRF6V12500Hr3 MRF6V12500Hsr3 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets rf power transistors designed for applications operating at frequencies between 960 and 1215 mhz. these devices are suitable for use in pulse applications. ? typical pulse performance: v dd =50volts,i dq = 200 ma, pulse width = 128 sec, duty cycle = 10% application p out (w) f (mhz) g ps (db) d (%) narrowband 500 peak 1030 19.7 62.0 broadband 500 peak 960--1215 18.5 57.0 ? capable of handling 10:1 vswr, @ 50 vdc, 1030 mhz, 500 watts peak power features ? characterized with series equival ent large--signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. for r5 tape and reel option, see p. 14. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +110 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal impedance, junction to case case temperature 80 c, 500 w pulse, 128 sec pulse width, 10% duty cycle z jc 0.044 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: MRF6V12500H rev. 3, 6/2012 freescale semiconductor technical data 960--1215 mhz, 500 w, 50 v pulse lateral n--channel rf power mosfets MRF6V12500Hr3 MRF6V12500Hsr3 case 465a--06, style 1 ni--780s MRF6V12500Hsr3 case 465--06, style 1 ni--780 MRF6V12500Hr3 ? freescale semiconductor, inc., 2009--2010, 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRF6V12500Hr3 MRF6V12500Hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2600 v machine model (per eia/jesd22--a115) b, passes 200 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 10 adc drain--source breakdown voltage (v gs =0vdc,i d = 200 ma) v (br)dss 110 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 20 adc zero gate voltage drain leakage current (v ds =90vdc,v gs =0vdc) i dss ? ? 200 adc on characteristics gate threshold voltage (v ds =10vdc,i d =1.32ma) v gs(th) 0.9 1.7 2.4 vdc gate quiescent voltage (v dd =50vdc,i d = 200 madc, measured in functional test) v gs(q) 1.7 2.4 3.2 vdc drain--source on--voltage (v gs =10vdc,i d =3.26adc) v ds(on) ? 0.25 ? vdc dynamic characteristics (1) reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 0.2 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 697 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 1391 ? pf functional tests (in freescale narrowband test fixture, 50 ohm system) v dd =50vdc,i dq = 200 ma, p out = 500 w peak (50 w avg.), f = 1030 mhz, 128 sec pulse width, 10% duty cycle power gain g ps 18.5 19.7 22.0 db drain efficiency d 58.0 62.0 ? % input return loss irl ? -- 1 8 -- 9 db typical broadband performance ? 960--1215 mhz (in freescale 960--1215 mhz test fixture, 50 ohm system) v dd =50vdc, i dq = 200 ma, p out = 500 w peak (50 w avg.), f = 960--1215 mhz, 128 sec pulse width, 10% duty cycle power gain g ps ? 18.5 ? db drain efficiency d ? 57.0 ? % 1. part internally matched both on input and output.
MRF6V12500Hr3 MRF6V12500Hsr3 3 rf device data freescale semiconductor, inc. figure 1. MRF6V12500Hr3(hsr3) test circuit schematic z11 0.161? x 1.500 microstrip z12 0.613? x 1.281 microstrip z13 0.248? x 0.865 microstrip z14 0.087? x 0.425 microstrip z15 0.309? x 0.090 microstrip z16 0.193? x 0.516 microstrip z17 0.279? x 0.080 microstrip z18 0.731? x 0.080 microstrip z19, z21 0.507? x 0.040 microstrip pcb arlon cuclad 250gx--0300--55--22, 0.030 , r =2.55 z1 0.457 x 0.080 microstrip z2 0.250 x 0.080 microstrip z3 0.605 x 0.040 microstrip z4 0.080 x 0.449 microstrip z5 0.374 x 0.608 microstrip z6 0.118 x 1.252 microstrip z7 0.778 x 1.710 microstrip z8 0.095 x 1.710 microstrip z9, z20 0.482 x 0.050 microstrip z10 0.138 x 1.500 microstrip z1 rf input c1 z2 z4 dut c2 rf output v bias v supply c8 c5 c12 c14 + z16 r3 z3 c15 + z5 c7 z15 z14 z13 z12 z11 z10 z8 z7 z6 z9 z19 r1 c9 z20 z21 z17 z18 c6 c16 c3 c11 c10 r2 c4 r4 c13 table 5. MRF6V12500Hr3(hsr3) test circ uit component designations and values part description part number manufacturer c1, c2 5.1 pf chip capacitors atc100b5r1ct500xt atc c3, c4, c5, c6 33 pf chip capacitors atc100b330jt500xt atc c7, c10 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c8,c11,c13,c16 2.2 f, 100 v chip capacitors 2225x7r225kt3ab atc c9 22 f, 25 v chip capacitor tpsd226m025r0200 avx c12 1 f, 100 v chip capacitor grm31cr72a105ka01l murata c14, c15 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp r1, r2 56 ? , 1/4 w chip resistors crcw120656r0fkea vishay r3, r4 0 ? , 3 a chip resistors crcw12060000z0ea vishay
4 rf device data freescale semiconductor, inc. MRF6V12500Hr3 MRF6V12500Hsr3 figure 2. MRF6V12500Hr3(hsr3) t est circuit component layout r3 cut out area MRF6V12500H rev. 1 c9 c8 c7 c3 r1 c1 r4 c11 c10 r2 c4 c6 c16 c2 c12 c5 c13 c14 c15
MRF6V12500Hr3 MRF6V12500Hsr3 5 rf device data freescale semiconductor, inc. typical characteristics 50 0.1 10000 020 10 v ds , drain--source voltage (volts) figure 3. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 10 1 40 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc 100 0 160 0 v dd =50vdc,i dq = 200 ma f = 1030 mhz, pulse width = 128 sec 10 100 duty cycle (%) figure 4. safe operating area maximum operating t case ( c) 25 140 120 80 60 40 20 520 15 p out = 525 w p out = 475 w p out = 500 w 22 30 0 100 21 20 80 60 50 40 p out , output power (watts) peak figure 5. power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 14 1000 g ps 18 v dd =50vdc,i dq = 200 ma, f = 1030 mhz pulse width = 128 sec, duty cycle = 10% 62 30 55 54 53 p in , input power (dbm) peak figure 6. output power versus input power 56 52 51 50 49 32 34 36 38 40 42 p out , output power (watts) p3db = 57.6 dbm (575 w) actual ideal p1db = 57.1 dbm (511 w) v dd =50vdc,i dq = 200 ma, f = 1030 mhz pulse width = 128 sec, duty cycle = 10% 57 58 59 17 22 30 21 p out , output power (watts) peak figure 7. power gain versus output power g ps , power gain (db) 100 20 i dq = 800 ma 1000 600 ma 19 18 200 ma v dd = 50 vdc, f = 1030 mhz pulse width = 128 sec, duty cycle = 10% figure 8. power gain versus output power p out , output power (watts) peak g ps , power gain (db) v dd =30v 12 22 30 16 21 35 v 20 45 v 100 1000 50 v 19 18 17 40 v i dq = 200 ma, f = 1030 mhz pulse width = 128 sec duty cycle = 10% 1000 19 16 17 15 70 30 20 10 60 61 400 ma 13 15 14
6 rf device data freescale semiconductor, inc. MRF6V12500Hr3 MRF6V12500Hsr3 typical characteristics 12 0 700 06 2 500 400 p in , input power (dbm) peak figure 9. output power versus input power p out , output power (watts) 48 600 10 t c =--30 _ c v dd =50vdc,i dq = 200 ma, f = 1030 mhz pulse width = 128 sec, duty cycle = 10% 85 _ c 55 _ c 25 _ c 14 22 30 0 80 100 60 50 p out , output power (watts) peak figure 10. power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 21 1000 25 _ c t c =--30 _ c 85 _ c 40 20 18 55 _ c v dd =50vdc,i dq = 200 ma, f = 1030 mhz pulse width = 128 sec, duty cycle = 10% g ps 200 100 300 19 16 17 15 70 30 20 10 250 10 9 90 t j , junction temperature ( c) figure 11. mttf versus junction temperature mttf calculator available at http:/www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 10 8 v dd =50vdc p out = 500 w peak pulse width = 128 sec duty cycle = 10% d = 62% v dd =50vdc,i dq = 200 ma, p out = 500 w peak f mhz z source ? z load ? 1030 1.36 -- j1.27 2.50 -- j0.17 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 12. series equivalent source and load impedance input matching network device under test output matching network z source z load
MRF6V12500Hr3 MRF6V12500Hsr3 7 rf device data freescale semiconductor, inc. figure 13. MRF6V12500H(hs) test circ uit component layout ? 960--1215 mhz r1 c10 cut out area mrf6v12500 rev. 1 r2 c7 c5 c3 c2 c1 c6 c4 c12 c14 c16 c8 c17 c18 c15 c13 c9 c11 table 6. MRF6V12500H(hs) test circuit component designations and values ? 960--1215 mhz part description part number manufacturer c1 2.2 pf chip capacitor atc100b2r2jt500xt atc c2 0.2 pf chip capacitor atc100b0r2bt500xt atc c3, c4 33 pf chip capacitors atc100b330jt500xt atc c5, c6, c11, c12 2.2 f, 100 v chip capacitors g2225x7r225kt3ab atc c7 22 f, 35 v tantalum capacitor t491x226k035at kemet c8 8.2 pf chip capacitor atc100b8r2ct500xt atc c9, c10 39 pf chip capacitors atc100b390jt500xt atc c13, c14 0.022 f, 100 v chip capacitors c1825c223k1gac kemet c15, c16 0.10 f, 100 v chip capacitors c1812f104k1rac kemet c17, c18 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp r1, r2 22 ? , 1/4 w chip resistors crcw120622r0fkea vishay pcb 0.030 , r =2.55 ad255a arlon
8 rf device data freescale semiconductor, inc. MRF6V12500Hr3 MRF6V12500Hsr3 typical characteristics ? 960--1215 mhz g ps , power gain (db) 1300 900 irl g ps f, frequency (mhz) figure 14. power gain, drain efficiency and irl versus frequency 1150 1100 1050 1000 950 20 18 -- 2 0 66 62 0 -- 1 0 d , drain efficiency (%) d 15 14 11 10 19 17 16 58 13 12 1200 1250 v dd =50vdc,p out = 500 w peak (50 w avg.), i dq = 200 ma pulse width = 128 sec, duty cycle = 10% 600 17 22 40 65 p out , output power (watts) peak figure 15. power gain and drain efficiency versus output power v dd =50vdc i dq = 200 ma pulse width = 128 sec duty cycle = 10% 400 200 21 20 19 18 60 55 50 45 d , drain efficiency (%) g ps d g ps , power gain (db) 64 60 56 -- 5 -- 1 5 irl, input return loss (db) 250 300 350 450 500 550 1150 mhz 1030 mhz 960 mhz 1215 mhz 1150 mhz 1030 mhz 960 mhz 1215 mhz
MRF6V12500Hr3 MRF6V12500Hsr3 9 rf device data freescale semiconductor, inc. z o =5 ? z load f = 1215 mhz f = 960 mhz z source f = 960 mhz f = 1215 mhz v dd =50vdc,i dq = 200 ma, p out = 500 w peak f mhz z source ? z load ? 960 2.25 -- j1.78 1.38 -- j1.53 1030 2.51 -- j1.02 1.48 -- j1.11 1090 2.69 -- j0.73 1.51 -- j0.78 1150 2.71 -- j0.65 1.53 -- j0.49 1215 2.48 -- j0.76 1.53 -- j0.33 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. series equivalent source and load impedance ? 960--1215 mhz input matching network device under test output matching network z source z load
10 rf device data freescale semiconductor, inc. MRF6V12500Hr3 MRF6V12500Hsr3 package dimensions
MRF6V12500Hr3 MRF6V12500Hsr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. MRF6V12500Hr3 MRF6V12500Hsr3
MRF6V12500Hr3 MRF6V12500Hsr3 13 rf device data freescale semiconductor, inc.
14 rf device data freescale semiconductor, inc. MRF6V12500Hr3 MRF6V12500Hsr3 product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for MRF6V12500H and MRF6V12500Hs parts will be available for 2 years after release of MRF6V12500H and MRF6V12500Hs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered MRF6V12500H and MRF6V12500Hs in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 sept. 2009 ? initial release of data sheet 1 apr. 2010 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? added rf high power model availability to product software, p. 9 2 sept. 2010 ? maximum ratings table: corrected v dss from --0.5, +100 to --0.5, +110 vdc, p. 2 ? added 960--1215 mhz broadband application as follows: -- typical performance, p. 1, 2 -- fig. 13, test circuit component layout and table 6, t est circuit component designations and values, p. 8 -- fig. 14, pulsed power gain, drain eff iciency and irl versus frequency, p. 9 -- fig. 15, power gain and drain efficiency versus output power, p. 9 -- fig. 16, series equivalent source and load impedance, p. 10 3 june 2012 ? table 3, esd protection characte ristics: added the device?s esd passing level as applicable to each esd class, p. 2 ? modified figure titles and/or graph axes l abels to clarify application use, p. 5, 6, 9 ? fig. 6, output power versus input power: corrected p out , output power unit of measure to watts, p. 5 ? fig. 9, output power versus input power: corrected p out , output power unit of measure to watts, p. 6 ? fig. 11, mttf versus junction temperature: mttf end temperature on graph changed to match maximum operating junction temperature, p. 6
MRF6V12500Hr3 MRF6V12500Hsr3 15 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2009--2010, 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MRF6V12500H rev. 3, 6/2012

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